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Hoffmann, Martin
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Hoffmann, Martin
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- PublicationAccès libreUltrafast optical parametric oscillator pumped by a vertical external-cavity surface-emitting laser (VECSEL)(2017)
; ; ; ; ;Hempler, Nils ;Malcolm, Graeme P. A ;Maker, Gareth TWe report the first optical parametric oscillator synchronously pumped by a SESAM modelocked vertical external-cavity surface-emitting laser (VECSEL). As a nonlinear medium, we use a periodically poled MgO:PPLN crystal. The VECSEL operates at a wavelength of 982 nm and a repetition rate of 198 MHz. The pump radiation is converted to signal and idler wavelengths tunable in the ranges of 1.4-1.8 μm and 2.2-3.5 μm, respectively, simply by a change of the poling period and crystal temperature. The signal pulses have a duration between 2 ps to 4 ps and an average output power up to 100 mW. - PublicationAccès libreGreen-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power(2015)
;Gürel, Kutan; ; ;Saraceno, Clara J; ;Resan, B ;Rohrbacher, A ;Weingarten, K; We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing. - PublicationMétadonnées seulementUltrafast thin-disk laser with 80 ?J pulse energy and 242 W of average power(2014)
;Saraceno, Clara Jody ;Emaury, Florian ;Schriber, Cinia; ;Golling, Matthias; Keller, Ursula - PublicationAccès libreUltrafast thin-disk laser with 80 µJ pulse energy and 242  W of average power(2014)
;Saraceno, Clara J ;Emaury, Florian ;Schriber, Cinia; ;Golling, Matthias; Keller, UrsulaWe present a semiconductor saturable absorber mirror (SESAM) mode-locked thin-disk laser generating 80 µJ of pulse energy without additional amplification. This laser oscillator operates at a repetition rate of 3.03 MHz and delivers up to 242 W of average output power with a pulse duration of 1.07 ps, resulting in an output peak power of 66 MW. In order to minimize the parasitic nonlinearity of the air inside the laser cavity, the oscillator was operated in a vacuum environment. To start and stabilize soliton mode locking, we used an optimized high-damage threshold, low-loss SESAM. With this new milestone result, we have successfully scaled the pulse energy of ultrafast laser oscillators to a new performance regime and can predict that pulse energies of several hundreds of microjoules will become possible in the near future. Such lasers are interesting for both industrial and scientific applications, for example for precise micromachining and attosecond science. - PublicationMétadonnées seulementExperimentally verified pulse formation model for high-power femtosecond VECSELs(2013)
;Sieber, Oliver D; ; ;Mangold, Mario ;Golling, Matthias ;Tilma, Bauke W; Keller, Ursula - PublicationMétadonnées seulementCutting-edge high-power ultrafast thin disk oscillators(2013)
;Saraceno, Clara Jody ;Schriber, Cinia ;Emaury, Florian ;Heckl, Oliver Hubert ;Baer, Cyrill Roman Emmanuel; ;Beil, Kolja ;Kränkel, Christian ;Golling, Matthias - PublicationAccès libre
- PublicationAccès libreCutting-Edge High-Power Ultrafast Thin Disk Oscillators(2013)
;Saraceno, Clara J ;Schriber, Cinia ;Emaury, Florian ;Heckl, Oliver H ;Baer, Cyrill R. E; ;Beil, Kolja ;Kränkel, Christian ;Golling, Matthias; Keller, UrsulaA growing number of applications in science and industry are currently pushing the development of ultrafast laser technologies that enable high average powers. SESAM modelocked thin disk lasers (TDLs) currently achieve higher pulse energies and average powers than any other ultrafast oscillator technology, making them excellent candidates in this goal. Recently, 275 W of average power with a pulse duration of 583 fs were demonstrated, which represents the highest average power so far demonstrated from an ultrafast oscillator. In terms of pulse energy, TDLs reach more than 40 µJ pulses directly from the oscillator. In addition, another major milestone was recently achieved, with the demonstration of a TDL with nearly bandwidth-limited 96-fs long pulses. The progress achieved in terms of pulse duration of such sources enabled the first measurement of the carrier-envelope offset frequency of a modelocked TDL, which is the first key step towards full stabilization of such a source. We will present the key elements that enabled these latest results, as well as an outlook towards the next scaling steps in average power, pulse energy and pulse duration of such sources. These cutting-edge sources will enable exciting new applications, and open the door to further extending the current performance milestones. - PublicationAccès libreExperimentally verified pulse formation model for high-power femtosecond VECSELs(2013)
;Sieber, Oliver D; ; ;Mangold, Mario ;Golling, Matthias ;Tilma, Bauke W; Keller, UrsulaOptically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible. - PublicationAccès libreCEO stabilization of a femtosecond laser using a SESAM as fast opto-optical modulator(2013)
; ; We present a new method for intra-cavity control of the carrier-envelope offset (CEO) frequency of ultrafast lasers that combines high feedback bandwidth with low loss, low nonlinearity, and low dispersion. A semiconductor saturable-absorber mirror (SESAM) inside a modelocked laser is optically pumped with a continuous-wave (cw) laser. In this way, the SESAM acts as intra-cavity opto-optical modulator (OOM): the optical power of the cw-laser corresponds to a high-bandwidth modulation channel for CEO frequency control. We experimentally verified this method for a femtosecond Er:Yb:glass oscillator (ERGO), in which one SESAM is in parallel used for modelocking and as intra-cavity OOM for achieving a tight CEO lock. This laser can also be CEO-stabilized in the usual scheme, in which the laser pump current is modulated, i.e., the gain element acts as intra-cavity OOM. We compare the performance with gain and SESAM OOM measuring CEO transfer function, frequency noise power spectral density (PSD), and Allan deviation for integration times up to 1000 s. In the case of the gain OOM, the millisecond upper-state lifetime of the Er:Yb:glass limits the achievable CEO-control bandwidth to <10 kHz. The feedback bandwidth of the SESAM OOM was more than a factor of 10 higher than the gain OOM bandwidth and was mainly limited by the used current driver. The residual integrated phase noise (1 Hz – 100 kHz) of the ~20-MHz CEO beat was improved by more than an order of magnitude (from 720 mrad to less than 65 mrad), and the fractional frequency stability by a factor of 4 (from 1∙10−8 to 2.5∙10−9 at 1 s).