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Wittwer, Valentin
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Wittwer, Valentin
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valentin.wittwer@unine.ch
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21 RƩsultats
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- PublicationAccĆØs libreCarrier-envelope offset frequency stabilization of a gigahertz semiconductor disk laser(2017)
; ;Gürel, Kutan; ; ; ; ;Waldburger, Dominik ;Keller, UrsulaOptical frequency combs based on ultrafast lasers have enabled numerous scientific breakthroughs. However, their use for commercial applications is limited by the complexity and cost of femtosecond laser technology. Ultrafast semiconductor lasers might change this issue as they can be mass produced in a cost-efficient way while providing large spectral coverage from a single technology. However, it has not been proven to date if ultrafast semiconductor lasers are suitable for stabilization of their carrier-envelope offset (CEO) frequency. Here we present what we believe to be the first CEO frequency stabilization of an ultrafast semiconductor disk laser (SDL). The optically pumped SDL is passively modelocked by a semiconductor saturable absorber mirror. It operates at a repetition rate of 1.8 GHz and a center wavelength of 1034 nm. The 273 fs pulses of the oscillator are amplified to an average power level of 6 W and temporally compressed down to 120 fs. A coherent octave-spanning supercontinuum spectrum is generated in a photonic crystal fiber. The CEO frequency is detected in a standard Ęātoā2Ę interferometer and phase locked to an external reference by feedback applied to the current of the SDL pump diode. This proof-of-principle demonstrates that ultrafast SDLs are suitable for CEO stabilization and constitutes a key step for further developments of this comb technology expected in the coming years. - PublicationAccĆØs libreExtreme ultraviolet light source at a megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillator(2017)
;Labaye, FranƧois; ; ;Diebold, A; ;Modsching, Norbert Paul; ;Emaury, F ;Graumann, I.J ;Phillips, C.R ;Saraceno, C.J ;KrƤnkel, C ;Keller, UrsulaWe demonstrate a compact extreme ultraviolet (XUV) source based on high-harmonic generation (HHG) driven directly inside the cavity of a mode-locked thin-disk laser oscillator. The laser is directly diode-pumped at a power of only 51 W and operates at a wavelength of 1034 nm and a 17.35 MHz repetition rate. We drive HHG in a high-pressure xenon gas jet with an intracavity peak intensity of 2.8Ć1013āāW/cm2 and 320 W of intracavity average power. Despite the high-pressure gas jet, the laser operates at high stability. We detect harmonics up to the 17th order (60.8 nm, 20.4 eV) and estimate a flux of 2.6Ć108āāphotons/s for the 11th harmonic (94 nm, 13.2 eV). Due to the power scalability of the thin-disk concept, this class of compact XUV sources has the potential to become a versatile tool for areas such as attosecond science, XUV spectroscopy, and high-resolution imaging. - PublicationAccĆØs libreFull stabilization and characterization of an optical frequency comb from a diode-pumped solid-state laser with GHz repetition rate(2017)
; ; ; ;Gürel, Kutan; ;Mayer, Aline S ;Keller, UrsulaWe demonstrate the first self-referenced full stabilization of a diode-pumped solid-state laser (DPSSL) frequency comb with a GHz repetition rate. The Yb:CALGO DPSSL delivers an average output power of up to 2.1 W with a typical pulse duration of 96 fs and a center wavelength of 1055 nm. A carrier-envelope offset (CEO) beat with a signal-to-noise ratio of 40 dB (in 10-kHz resolution bandwidth) is detected after supercontinuum generation and Ę-to-2Ę interferometry directly from the output of the oscillator, without any external amplification or pulse compression. The repetition rate is stabilized to a reference synthesizer with a residual integrated timing jitter of 249 fs [10 Hz ā 1 MHz] and a relative frequency stability of 10ā12/s. The CEO frequency is phase-locked to an external reference via pump current feedback using home-built modulation electronics. It achieves a loop bandwidth of ā¼150 kHz, which results in a tight CEO lock with a residual integrated phase noise of 680 mrad [1 Hz ā 1 MHz]. We present a detailed characterization of the GHz frequency comb that combines a noise analysis of the repetition rate Ęrep, of the CEO frequency ĘCEO, and of an optical comb line at 1030 nm obtained from a virtual beat with a narrow-linewidth laser at 1557 nm using a transfer oscillator. An optical comb linewidth of about 800 kHz is assessed at 1-s observation time, for which the dominant noise sources of Ęrep and ĘCEO are identified. - PublicationAccĆØs libreHigh-power amplification of a femtosecond vertical external-cavity surface-emitting laser in an Yb: YAG waveguide(2017)
; ; ;Kränkel, Christian ;Waldburger, Dominik ;Keller, Ursula; Calmano, ThomasWe present the amplification of a mode-locked vertical external-cavity surfaceemitting laser (VECSEL) using an Yb:YAG crystalline waveguide as gain medium. The VECSEL seed laser operates at a center wavelength of 1030 nm and generates 300-fs pulses at a repetition rate of 1.77 GHz. An average seed power of 60 mW was launched onto a 8.3 mm long fs-laser written Yb:YAG waveguide pumped by 7.7 W from a 969-nm continuous-wave VECSEL. The amplifier achieves an average output power of up to 2.9 W, corresponding to an amplification factor of 17 dB. Due to gain narrowing, the pulse duration increases to 629 fs. Our results show that crystalline waveguides are a promising technique for the realization of compact multi-watt ultrafast amplifier systems. - PublicationAccès libreFirst investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser(2016)
; ; ; ; ; ;Waldburger, Dominik ;Link, Sandro M ;Alfieri, Cesare G. E ;Golling, Matthias; ;Morel, Jacques ;Keller, UrsulaSüdmeyer, Thomas. Laboratoire Temps-FrĆ©quence, UniversitĆ© de NeuchĆ¢tel, SwitzerlandWe present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard Ę-to-2Ę interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ā¼300 kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future. - PublicationMĆ©tadonnĆ©es seulementExperimentally verified pulse formation model for high-power femtosecond VECSELs(2013)
;Sieber, Oliver D; ; ;Mangold, Mario ;Golling, Matthias ;Tilma, Bauke W; Keller, Ursula - PublicationMƩtadonnƩes seulementSub-60-fs Timing Jitter of a SESAM Modelocked VECSEL(2013)
; ;van der Linden, R ;Tilma, Bauke W ;Resan, B ;Weingarten, Kurt J; Keller, Ursula - PublicationAccĆØs libreExperimentally verified pulse formation model for high-power femtosecond VECSELs(2013)
;Sieber, Oliver D; ; ;Mangold, Mario ;Golling, Matthias ;Tilma, Bauke W; Keller, UrsulaOptically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible. - PublicationMƩtadonnƩes seulementHigh-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation(2012)
; ;Mangold, Mario; ;Sieber, Oliver D ;Golling, Matthias; Keller, Ursula - PublicationMƩtadonnƩes seulementVECSEL gain characterization(2012)
;Mangold, Mario; ;Sieber, Oliver D; ;Krestnikov, Igor L ;Livshits, Daniil A ;Golling, Matthias; Keller, Ursula